advanced power n-channel enhancement mode electronics corp. power mosfet lead-free package bv dss 30v low conductance loss r ds(on) 4.7m low profile ( < 0.7mm ) i d 17.3a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i d @t c =25 a i dm a p d @t a =25 w p d @t a =70 w p d @t c =25 w e as mj i ar a t stg t j rthj-c maximum thermal resistance, junction-ambient 4 3 /w rthj-a maximum thermal resistance, junction-ambient 3 58 /w data and specifications subject to change without notice thermal data storage temperature range 1 total power dissipation 3 single pulse avalanche energy 5 -40 to 150 operating junction temperature range -40 to 150 24 avalanche current 1 total power dissipation 3 1.4 total power dissipation 4 continuous drain current, v gs @ 10v 3 14.3 pulsed drain current 1 150 continuous drain current, v gs @ 10v 4 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 17.3 parameter rating drain-source voltage 30 AP1003BST preliminary 75 28.8 2.2 20100809pre 42 g d s the AP1003BST used the latest apec power mosfet silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. the greenfet tm package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency dc-dc converters. greenfet tm g s s dd st
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =13a - 3.6 4.7 m ? v gs =4.5v, i d =11a - 5.2 7.5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1.35 - 2.35 v g fs forward transconductance v ds =10v, i d =11a 13 23 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v ,v gs =0v - - 150 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =11a - 12 19.2 nc q gs gate-source charge v ds =15v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =16v - 10 - ns t r rise time i d =11a - 41 - ns t d(off) turn-off delay time r g = 3.3 ? v gs = 10 v - 22 - ns t f fall time r d = 1.45 - 7.6 - ns c iss input capacitance v gs =0v - 1155 1850 pf c oss output capacitance v ds =25v - 400 - pf c rss reverse transfer capacitance f=1.0mhz - 170 - pf r g gate resistance f=1.0mhz - 1.1 2 ? source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) --52 a i sm pulsed source current ( body diode ) 1 - - 110 a v sd forward on voltage 2 i s =11a, v gs =0v - 0.82 1 v t rr reverse recovery time i s =11a, v gs =0v, - 32 48 ns q rr reverse recovery charge di/dt=100a/s - 26 39 nc notes: 1.pulse width limited by max junction temperature. 2.pulse test 4.t c measured with thermocouple mounted to top (drain) of part. 5.starting t j =25 o c , l=0.1mh , r g =25 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP1003BST 2 3.surface mounted on 1 in 2 copper pad of fr4 board.
ap1003bs t fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 20 40 60 80 100 120 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =13a v g =10v 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 3.2 3.6 4 4.4 4.8 5.2 5.6 6 246810 v gs , gate-to-source voltage (v) r ds(on) (m ?
ap1003bs t fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thjc + t c rthja = 58 0 2 4 6 8 10 0 8 16 24 32 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =11a v ds =15v v ds =18v v ds =24v 0 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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